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FDMC7680 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDMC7680
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC7680?> डेटा पत्रक पीडीएफ

FDMC7680 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
30
V
ID = 250 PA, referenced to 25 °C
15 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = 20 V, VDS = 0 V
1
PA
250
100 nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 14.8 A
VGS = 4.5 V, ID = 12.4 A
VGS = 10 V, ID = 14.8 A
TJ = 125 °C
VDD = 5 V, ID = 14.8 A
1.2 2.0 3.0
V
-6 mV/°C
5.8 7.2
7.3 9.5 m:
7.4 9.2
68 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2145
770
75
0.5
2855
1020
115
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
www.DataShQeegdt4U.com Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VDD = 15 V, ID = 14.8 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 14.8 A
12 22 ns
4 10 ns
25 40 ns
3 10 ns
30 42 nC
14 19 nC
7 nC
4 nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 14.8 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14.8 A, di/dt = 100 A/Ps
0.84 1.2
0.73 1.2
34 54
15 24
V
ns
nC
NOTES:
1. R TJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 72 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 5.7 A.
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
2
www.fairchildsemi.com

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डाउनलोड[ FDMC7680 Datasheet.PDF ]


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