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FDMC7664 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDMC7664
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC7664?> डेटा पत्रक पीडीएफ

FDMC7664 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current, Forward
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 18.8 A
VGS = 4.5 V, ID = 16.1 A
VGS = 10 V, ID = 18.8 A
TJ = 125 °C
VDD = 5 V, ID = 18.8 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg
Qgs
www.DataShQeegdt4U.com
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 18.8 A
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 18.8 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18.8 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
IF = 18.8 A, di/dt = 100 A/Ps
Min
30
1.0
Typ
12
1.9
-7
3.6
4.5
4.4
115
3655
1100
115
0.8
15
7
37
6
55
25
12
6
0.83
0.71
41
20
Max Units
V
mV/°C
1
PA
250
100 nA
3.0 V
mV/°C
4.2
5.5 m:
5.4
S
4865
1465
170
pF
pF
pF
:
27 ns
14 ns
59 ns
12 ns
76 nC
34 nC
nC
nC
1.2
V
1.2
65 ns
35 nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 188 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 19.4 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 8.3 A.
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.B
2
www.fairchildsemi.com

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