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FDMC6679AZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDMC6679AZ
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC6679AZ?> डेटा पत्रक पीडीएफ

FDMC6679AZ pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = -250 µA, VGS = 0 V
ID = -250 µA, referenced to 25 °C
VDS = -24 V,
VGS = 0 V,
TJ = 125 °C
VGS = ±25 V, VDS = 0 V
-30 V
29 mV/°C
-1
-100
±10
µA
µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
-1 -1.8 -3
V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
-7 mV/°C
VGS = -10 V, ID = -11.5 A
8.6 10
rDS(on)
Static Drain to Source On Resistance VGS = -4.5 V, ID = -8.5 A
12 18 m
VGS = -10 V, ID = -11.5 A, TJ = 125 °C
12 15
gFS Forward Transconductance
VDS = -5 V, ID = -11.5 A
46 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -15 V, VGS = 0 V,
f = 1 MHz
2985
570
500
4.3
3970
755
750
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
www.DataShQeegdt4U.com
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15 V, ID = -11.5 A,
VGS = -10 V, RGEN = 6
VGS = 0 V to -10 V
VGS = 0 V to -5 V
VDD = -15 V,
ID = -11.5 A
12 21 ns
14 25 ns
63 100 ns
46 73 ns
65 91 nC
37 52 nC
8.7 nC
17 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = -11.5 A
VGS = 0 V, IS = -1.6 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -11.5 A, di/dt = 100 A/µs
0.83
0.71
31
16
1.30
1.20
49
28
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
2
www.fairchildsemi.com

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डाउनलोड[ FDMC6679AZ Datasheet.PDF ]


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