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2SA1235A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (2SAxxxx) SILICON PNP EPITAXIAL TYPE - Isahaya Electronics Corporation

भाग संख्या 2SA1235A
समारोह (2SAxxxx) SILICON PNP EPITAXIAL TYPE
मैन्युफैक्चरर्स Isahaya Electronics Corporation 
लोगो Isahaya Electronics Corporation लोगो 
पूर्व दर्शन
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<?=2SA1235A?> डेटा पत्रक पीडीएफ

2SA1235A pdf
< SMALL-SIGNAL TRANSISTOR >
2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS(Ta=25℃)
Symbol
CBO
EBO
CEO
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter
voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
2SA1235A
-60
200
Ratings
2SA1602A
-60
-6
-50
200
200
+150
-55~+150
2SA1993
-50
450
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parame
ter
Symbol
Test conditions
(BR)CEO
CBO
EBO
FE*
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
I C=-100μA,RBE=∞
2SA1993
2SA1235A,2SA1602A
VEB=-6V,I C =0
VCE=-6V,I C =-1mA
VCB=-50V,I E =0
VCB=-60V,I E =0
FE C to E Saturation Vlotage
2SA1993
2SA1235A,2SA1602A
VCE=-6V,I C =-0.1mA
CE(sat)
Cob
NF
Gain bandwidth product
Collector output capacitance
C to E break down voltage
Noise figure
I C =-100mA,I B =-10mA
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA,f=100Hz,RG=10kΩ
*: It shows hFE classification in below table.
Limits
Min Typ Max
-50
-0.1
-0.1
-0.1
150 500
50
90
-0.3
200
4.0
20
Unit
V
μA
μA
V
MHz
pF
dB
hFE 2SA1235A
www.DataSheet4U.2cSoAm1602A
2SA1993
E
150~300
F
250~500
ISAHAYA ELECTRONICS CORPORATION

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