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2SC3356W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Epitaxial Planar Transistor - Galaxy Semi-Conductor Holdings Limited

भाग संख्या 2SC3356W
समारोह Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स Galaxy Semi-Conductor Holdings Limited 
लोगो Galaxy Semi-Conductor Holdings Limited लोगो 
पूर्व दर्शन
1 Page
		
<?=2SC3356W?> डेटा पत्रक पीडीएफ

2SC3356W pdf
BL Galaxywww.DataSheet4U.com Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC3356W
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 20 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
12 V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
3
V
Collector cut-off current
ICBO
VCB=10V,IE=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
Transition frequency
Noise figure
hFE
fT
F
CLASSIFICATION OF hFE(1)
Rank
Q
Range
Marking
50-100
R23
VEB=1V,IC=0
0.1 μA
VCE=10V,IC=20mA
50 300
VCE=10V, IC= 20mA
VCE=10V,IC=7mA,f=1GHz
6
2
GHz
dB
R
80-160
R24
S
125-250
R25
Document number: BL/SSSTF001
Rev.A
www.galaxycn.com
2

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