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IRFP31N50L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay Siliconix

भाग संख्या IRFP31N50L
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP31N50L?> डेटा पत्रक पीडीएफ

IRFP31N50L pdf
IRFP31N50L, SiHFP31N50L
www.DVaitasShheaeyt4US.coilmiconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.26
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 19 Ab
VDS = 50 V, ID = 19 Ab
500 -
-V
- 0.28 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 µA
- - 2.0 mA
-
0.15 0.18
Ω
15 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Effective Output Capacitance
Coss eff. (ER)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Internal Gate Resistance
rG
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 400 V , f = 1.0 MHz
VDS = 0 V to 400 Vc
VGS = 10 V
ID = 31 A, VDS = 400 V,
see fig. 7 and 13b
f = 1 MHz, open drain
VDD = 250 V, ID = 31 A,
RG = 4.3 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5000
553
59
6630
155
276
200
-
-
-
1.1
28
115
54
53
-
-
-
-
-
-
-
210
58
100
-
-
-
-
-
pF
nC
Ω
ns
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 31
A
- - 124
Body Diode Voltage
VSD
TJ = 25 °C, IS = 31 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 31 A
TJ = 125 °C, dI/dt = 100 A/µsb
TJ = 25 °C, IS = 31 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/µsb
- 170 250
ns
- 220 330
- 570 860 nC
- 1.2 1.8 µC
Reverse Recovery Current
IRRM
TJ = 25 °C
-
7.9 12
A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91220
S-81274-Rev. A, 16-Jun-08

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डाउनलोड[ IRFP31N50L Datasheet.PDF ]


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