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X00619 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 0.8 A sensitive gate SCR - ST Microelectronics

भाग संख्या X00619
समारोह 0.8 A sensitive gate SCR
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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X00619 pdf
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1 Characteristics
X00619
Table 2.
Symbol
Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TL = 85 °C
TL = 85 °C
tp = 8.3 ms
Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
F = 60 Hz Tj = 125 °C
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
0.8 A
0.5 A
10
A
9
0.4 A2s
50 A/µs
1
0.1
- 40 to + 150
- 40 to + 125
A
W
°C
Table 3.
Symbol
Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 125 °C
MIN.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
Value
30
200
0.8
0.2
5
5
6
40
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics (per diode)
Symbol
Test conditions
VTM ITM = 1 A, tp = 380 µs
VTO Threshold voltage
Rd Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX
Value
1.35
0.85
245
1
100
Unit
V
V
mΩ
µA
µA
2/7 Doc ID 15755 Rev 1

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