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01N60P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - AP01N60P - Advanced Power Electronics

भाग संख्या 01N60P
समारोह AP01N60P
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
1 Page
		
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=50V, ID=0.8A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=1.6A
VDS=480V
VGS=10V
VDD=300V
ID=1.6A
RG=10Ω,VGS=10V
RD=187.5Ω
VGS=0V
VDS=25V
f=1.0MHz
600 - - V
- 0.6 - V/
- 7.2 8 Ω
2 - 4V
- 0.8 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 7.7 - nC
- 1.5 - nC
- 2.6 - nC
- 8 - ns
- 5 - ns
- 14 - ns
- 7 - ns
- 286 - pF
- 25 - pF
- 5 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=1.6A, VGS=0V
Min. Typ. Max. Units
- - 1.6 A
- - 6A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
2/4

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अनुशंसा डेटापत्रक

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01N60P AP01N60PAdvanced Power Electronics
Advanced Power Electronics


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