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2SA1216 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Power Transistor - Inchange Semiconductor Company Limited

भाग संख्या 2SA1216
समारोह Silicon PNP Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor Company Limited 
लोगो Inchange Semiconductor Company Limited लोगो 
पूर्व दर्शन
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<?=2SA1216?> डेटा पत्रक पीडीएफ

2SA1216 pdf
INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coPm NP Power Transistor
isc Product Specification
2SA1216
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
-180
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -0.8A
ICBO Collector Cutoff Current
VCB= -180V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
-2.0 V
-100 μA
-100 μA
hFE DC Current Gain
IC= -8A; VCE= -4V
30 180
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0; VCB= -10V;ftest= 1.0MHz
IE= 2A; VCE= -12V
500 pF
40 MHz
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= -10A ,RL= 4Ω,
IB1= -IB2= -1A,VCC= -40V
0.3 μs
0.7 μs
0.2 μs
‹ hFE Classifications
OYP
G
30-60 50-100 70-140 90-180
isc Websitewww.iscsemi.cn
2

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डाउनलोड[ 2SA1216 Datasheet.PDF ]


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