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9915H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - AP9915H - Advanced Power Electronics

भाग संख्या 9915H
समारोह AP9915H
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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9915H pdf
AP9915H/J
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS= ± 12V
ID=10A
VDS=20V
VGS=5V
VDS=10V
ID=10A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1Ω
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- 0.03 - V/
- - 50 mΩ
- - 80 mΩ
0.5 - 1.2 V
- 13 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 7.5 - nC
- 0.9 - nC
- 4 - nC
- 4.5 - ns
- 49.5 - ns
- 12 - ns
- 6 - ns
- 195 - pF
- 126 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=20A, VGS=0V
Min. Typ. Max. Units
- - 20 A
- - 41 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
9915HAP9915HAdvanced Power Electronics
Advanced Power Electronics


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