DataSheet.in

HN7G08FE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - General-Purpose Amplifier Applications - Toshiba Semiconductor

भाग संख्या HN7G08FE
समारोह General-Purpose Amplifier Applications
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HN7G08FE?> डेटा पत्रक पीडीएफ

HN7G08FE pdf
Q1 Electrical Characteristics (Ta = 25°C)
www.DataSheCeht4aUra.cctoemristic
Collector cutoff current
Emitter cutoff current
DC current gain (Note)
Collector-emitter
saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE
VCE(sat) (1)
VCE(sat) (2)
VBE(sat)
fT
Cob
Test
Circuit
Test Condition
VCB = 15 V, IE = 0
VEB =5 V, IC = 0
VCE =2 V, IC =10 mA
IC =10 mA, IB =0.5 mA
IC =200 mA, IB =10 mA
IC =200 mA, IB =10 mA
VCE =2 V, IC =10 mA
VCB =10 V, IE = 0, f = 1 MHz
Turn-on time
ton
HN7G08FE
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
300 1000
15 30
mV
110 250
0.87 1.2 V
130 MHz
4.2 pF
40
Switching time
Storage time
tstg
280
ns
Fall time
tf IB1 = −IB2 = 5 mA
Note: hFE classification A(A): 300~600, B(B): 500~1000
( ) marking symbol
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
ICBO
ICEO
IEBO
hFE
VCE(sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
――
――
65
Min Typ. Max Unit
― ― 100
nA
― ― 500
0.074 0.138 mA
80 ― ―
0.1 0.3 V
0.7 1.3 V
0.5 0.8 V
250 MHz
3 pF
3.29 4.7 6.11 kΩ
0.09 0.1 0.11
Marking
654
Type Name
hFE Rank
76A
Equivalent Circuit (Top View)
65 4
Q2
Q1
12 3
12 3
2 2007-11-01

विन्यास 6 पेज
डाउनलोड[ HN7G08FE Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
HN7G08FEGeneral-Purpose Amplifier ApplicationsToshiba Semiconductor
Toshiba Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English