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FSGL134R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Radiation Hardened / SEGR Resistant N-Channel Power MOSFET - Fairchild Semiconductor

भाग संख्या FSGL134R
समारोह Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FSGL134R?> डेटा पत्रक पीडीएफ

FSGL134R pdf
FSGL134R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drawiwn wto.DSaotuarScheeVeot4ltaUg.ceo.m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
FSGL134R
150
150
10
6
40
±30
25
10
0.20
40
10
40
-55 to 150
300
1.0 (Typical)
UNITS
V
V
A
A
A
V
W
W
W/ oC
A
A
A
oC
oC
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
tr
td(OFF)
tf
Qg (12)
Qgs
Qgd
Qg (20)
Qg (TH)
V(PLATEAU)
CISS
COSS
CRSS
RθJC
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 120V,
VGS = 0V
VGS = ±30V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 10A
ID = 6A,
TC = 25oC
VGS = 12V
TC = 125oC
VDD = 75V, ID = 10A,
RL = 7.5, VGS = 12V,
RGS = 7.5
VGS = 0V to 12V
75V < VDD < 120V,
ID = 10A
VGS = 0V to 20V
VGS = 0V to 2V
ID = 10A, VDS = 15V
VDS = 25V, VGS = 0V,
f = 1MHz
MIN TYP MAX UNITS
150 - - V
- - 5.5 V
2.0 - 4.5 V
1.0 - - V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
-
-
1.30
V
- 0.110 0.125
- - 0.219
- - 20 ns
- - 40 ns
- - 35 ns
- - 25 ns
- 26 28 nC
- 10 12 nC
- 8 10 nC
- 40 - nC
- 3 - nC
-7-V
- 1200 -
pF
- 275 -
pF
- 16 - pF
- - 5.0 oC/W
©2001 Fairchild Semiconductor Corporation
4-2
FSGL134R Rev. A1

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