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UT54ACTS10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - triple three-input NAND gates - ETC

भाग संख्या UT54ACTS10
समारोह triple three-input NAND gates
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
1 Page
		
<?=UT54ACTS10?> डेटा पत्रक पीडीएफ

UT54ACTS10 pdf
UT54ACS10/UT54ACTS10
RADIATION HARDNESS SPECIFICATIONS 1
PARAMETER
Total Dose
SEU Threshold2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm2/mg
MeV-cm2/mg
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
www.DataSheAeBt4SUO.coLmUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-.3 to VDD +.3
V
TSTG
Storage Temperature range
-65 to +150
C
TJ Maximum junction temperature
+175
C
TLS Lead temperature (soldering 5 seconds)
+300
C
JC Thermal resistance junction to case 20 C/W
II DC input current
10 mA
PD Maximum power dissipation
1W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VDD
VIN
TC
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to VDD
-55 to + 125
UNITS
V
V
C
RadHard MSI Logic
18

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डाउनलोड[ UT54ACTS10 Datasheet.PDF ]


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