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5SHY35L4510 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Asymmetric Integrated Gate- Commutated Thyristor - ABB

भाग संख्या 5SHY35L4510
समारोह Asymmetric Integrated Gate- Commutated Thyristor
मैन्युफैक्चरर्स ABB 
लोगो ABB लोगो 
पूर्व दर्शन
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5SHY35L4510 pdf
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
Max. RMS on-state current IT(RMS)
Max. peak non-repetitive
surge on-state current
Limiting load integral
ITSM
I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive
surge on-state current
Limiting load integral
www.DataSheeSt4tUra.cyominductance between
GCT and antiparallel diode
ITSM
I2t
LD
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Only relevant for applications with
antiparallel diode to the IGCT
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
Symbol Conditions
On-state voltage
Threshold voltage
Slope resistance
VT
V(T0)
rT
IT = 4000 A, Tj = 125 °C
Tj = 125 °C
IT = 1000...4000 A
Turn-on switching (see Fig. 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr f = 0..500 Hz, Tj = 125 °C,
VD = 2800 V, ITM 4000 A
Symbol Conditions
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
tdon
tdon SF
tr
Eon
VD = 2800 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
Characteristic values
Parameter
ITGQM
VDM VDRM, Tj = 125°C,
VD = 2800 V, RS = 0.65 ,
CCL = 10 µF, LCL 0.3 µH
Symbol Conditions
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
tdoff
tdoff SF
Eoff
VD = 2800 V, Tj = 125 °C
VDM VDRM, RS = 0.65
ITGQ = 4000 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
min
min
min
min
min
min
5SHY 35L4510
typ max Unit
1700 A
2670
32×103
A
A
5.12×106 A2s
21×103 A
6.62×106 A2s
300 nH
200 A/µs
typ max Unit
2.35 2.7 V
1.4 V
0.325 m
typ max Unit
1000 A/µs
typ max Unit
3.5 µs
7 µs
1 µs
1.5 J
typ max Unit
4000 A
typ max Unit
7 µs
7 µs
19.5
22 J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 2 of 9

विन्यास 9 पेज
डाउनलोड[ 5SHY35L4510 Datasheet.PDF ]


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