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RD16HHF1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon MOSFET Power Transistor - Mitsubishi Electric

भाग संख्या RD16HHF1
समारोह Silicon MOSFET Power Transistor
मैन्युफैक्चरर्स Mitsubishi Electric 
लोगो Mitsubishi Electric लोगो 
पूर्व दर्शन
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RD16HHF1 pdf
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage
Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
ID Drain to source current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
-5 to +10
56.8
0.8
5
150
-40 to +150
2.2
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
(Tc=25°C , UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.7 - 4.7
Pout Output power
VDS=12.5V, Pin=0.4W,
16 19
-
D Drain efficiency
f=30MHz, Idq=0.5A
55 65
-
Load VSWR tolerance
VDS=15.2V,Po=16W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
No destroy
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
Publication Date : Jul.2017
2

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