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53NA50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STE53NA50 - ST Microelectronics

भाग संख्या 53NA50
समारोह STE53NA50
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=53NA50?> डेटा पत्रक पीडीएफ

53NA50 pdf
STE53NA50
THERMAL DATA
Rt hj-ca se
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink W ith Conductive
Grease Applied
Max
Max
0 .2 7
0 .0 5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
www.DataSheet4U.comE AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
26
1014
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 1 mA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ. Max.
100
1000
± 400
Unit
V
µA
µA
nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 27 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2.25
Typ .
3
Max.
3.75
Unit
V
0.075 0.085
53 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS >ID(on) X RDS(on)MAX ID = 27 A
Min.
25
Typ. Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
13
1500
450
16
2000
650
nF
pF
pF
2/7

विन्यास 7 पेज
डाउनलोड[ 53NA50 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
53NA50 STE53NA50ST Microelectronics
ST Microelectronics


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