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IRFP32N50KPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFP32N50KPBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP32N50KPBF pdf
IRFP32N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
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IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max.
500 ––– –––
––– 0.54 –––
––– 0.135 0.16
3.0 ––– 5.0
––– ––– 50
––– ––– 250
––– ––– 100
––– ––– -100
Units
V
V/°C
V
µA
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 32A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
14 ––– ––– S VDS = 50V, ID = 32A
Qg Total Gate Charge
––– ––– 190
ID = 32A
Qgs Gate-to-Source Charge
––– ––– 59 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 84
VGS = 10V „
td(on)
Turn-On Delay Time
––– 28 –––
VDD = 250V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 120 ––– ns ID = 32A
––– 48 –––
RG = 4.3
tf Fall Time
––– 54 –––
VGS = 10V „
Ciss Input Capacitance
––– 5280 –––
VGS = 0V
Coss Output Capacitance
––– 550 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 45 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 5630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 155 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
––– 265 –––
VGS = 0V, VDS = 0V to 400V …
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 32
––– ––– 130
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V „
––– 530 800 ns TJ = 25°C, IF = 32A
––– 9.0 13.5 µC di/dt = 100A/µs „
––– 30 ––– A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.87mH, RG = 25,
IAS = 32A,
ƒ ISD 32A, di/dt 197A/µs, VDD V(BR)DSS,
TJ 150°C
2
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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