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2MBI1200U4G-120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT-Module - Fuji Electric

भाग संख्या 2MBI1200U4G-120
समारोह IGBT-Module
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
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<?=2MBI1200U4G-120?> डेटा पत्रक पीडीएफ

2MBI1200U4G-120 pdf
2MBI1200U4G-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25ºC,chip
2800
2400
VGE=20V 15V 12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
2800
2400
VGE=20V 15V
12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25ºC,chip
10
8
6
4
Ic=2400A
2 Ic=1200A
Ic=600A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
10
Coes
1
0 10 20
Collector-Emitter voltage : VCE [V]
30
1000
Dynamic Gate charge (typ.)
VCC=600V, IC=1200A, Tj= 25°C
25
800
VCE
600
20
VGE
15
400 10
200 5
00
0 1000 2000 3000 4000 5000 6000
Gate charge : Qg [ nC ]
2

विन्यास 6 पेज
डाउनलोड[ 2MBI1200U4G-120 Datasheet.PDF ]


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