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M2LZ47 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SM2LZ47 - Toshiba Semiconductor

भाग संख्या M2LZ47
समारोह SM2LZ47
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=M2LZ47?> डेटा पत्रक पीडीएफ

M2LZ47 pdf
SM2LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
Gate Trigger Voltage
Gate Trigger Current
Peak OnState Voltage
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Gate NonTrigger Voltage
Holding Current
Thermal Resistance
I
II
III
I
II
III
Critical Rate of Rise of OffState Voltage
Critical Rate of Rise of OffState Voltage
at Communication
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (ja)
dv / dt
(dv / dt) c
VDRM = 800V
VD = 12V,
RL = 20
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
VD = 12V,
RL = 20
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
ITM = 3A
VD = 800V, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Ambient, AC
VDRM = 800V, Tj = 125°C
Exponential Rise
VDRM = 400V, Tj = 125°C
(di / dt) c = 0.5A / ms
MIN TYP. MAX UNIT
― ― 20 µA
― ― 1.5
― ― 1.5 V
― ― 1.5
― ― 10
― ― 10 mA
― ― 10
― ― 2.0 V
0.2 ― ― V
― ― 10 mA
― ― 58 °C / W
500 V / µs
5 ― ― V / µs
MARKING
NUMBER
SYMBOL
*1 Toshiba Product Mark
*2 TYPE
SM2LZ47
MARK
M2LZ47
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2 2001-07-10

विन्यास 5 पेज
डाउनलोड[ M2LZ47 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
M2LZ47 SM2LZ47Toshiba Semiconductor
Toshiba Semiconductor


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