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AP9972GR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9972GR
समारोह POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9972GR?> डेटा पत्रक पीडीएफ

AP9972GR pdf
AP9972GR
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=35A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=25A
VDS=VGS, ID=250uA
VDS=10V, ID=35A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=±25V
ID=35A
VDS=48V
VGS=4.5V
VDS=30V
ID=35A
RG=3.3Ω,VGS=10V
RD=0.86Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 -
-V
- 0.06 - V/
- - 18 mΩ
- - 22 mΩ
1 - 3V
- 55 - S
- - 10 uA
- - 25 uA
- - ±100 nA
- 32 51 nC
- 8 - nC
- 20 - nC
- 11 - ns
- 58 - ns
- 45 - ns
- 80 - ns
- 3170 5070 pF
- 280 - pF
- 230 - pF
- 1.7 - Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=35A, VGS=0V
IS=35A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 50 - ns
- 48 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.

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डाउनलोड[ AP9972GR Datasheet.PDF ]


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