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AP9926O डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9926O
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9926O?> डेटा पत्रक पीडीएफ

AP9926O pdf
AP9926O
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=4A
VGS=2.5V, ID=2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=4.6A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V
VGS= ± 8V
ID=4.6A
VDS=20V
VGS=5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- 0.1 - V/
- 23 28 mΩ
- - 40 mΩ
0.5 - - V
- 9.7 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 12.5 - nC
- 1 - nC
- 6.5 - nC
- 7 - ns
- 14.5 - ns
- 19 - ns
- 12 - ns
- 355 - pF
- 190 - pF
- 85 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V,VS=1.2V
Tj=25,IS=1.25A,VGS=0V
Min. Typ. Max. Units
- - 0.83 A
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad.

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डाउनलोड[ AP9926O Datasheet.PDF ]


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