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AP9926EM-A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9926EM-A
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9926EM-A?> डेटा पत्रक पीडीएफ

AP9926EM-A pdf
AP9926EM-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=5V, ID=6A
VDS=16V, VGS=0V
VDS=12V ,VGS=0V
VGS=±12V
ID=6A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=10V
RD=10Ω
VGS=0V
VDS=16V
f=1.0MHz
Gate Resistance
f=1.0MHz
16 -
-V
- 0.01 - V/
- - 27 mΩ
- - 40 mΩ
- - 1.2 V
- 13 - S
- - 1 uA
- - 25 uA
- - ±10 uA
- 14 22 nC
- 1.4 - nC
- 7 - nC
- 10 - ns
- 13 - ns
- 26 - ns
- 8 - ns
- 420 670 pF
- 280 - pF
- 120 - pF
- 3 -Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 /W when mounted on Min. copper pad.

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डाउनलोड[ AP9926EM-A Datasheet.PDF ]


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