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AP9922EO डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9922EO
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9922EO?> डेटा पत्रक पीडीएफ

AP9922EO pdf
AP9922EO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=4A
VDS=VGS, ID=1mA
VDS=4.5V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±12V
ID=6A
VDS=16V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=4.5V
RD=15Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 - - V
- 0.05 - V/
- - 15 mΩ
- - 20 mΩ
0.5 - 1.2 V
- 22 -
S
- - 10 uA
- - 100 uA
- - ±10 uA
- 25 40 nC
- 3 - nC
- 9 - nC
- 11 - ns
- 12 - ns
- 47 - ns
- 23 - ns
- 1730 2770 pF
- 280 - pF
- 240 - pF
- 2.2 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=0.84A,VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 24 - ns
- 18 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad.

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डाउनलोड[ AP9922EO Datasheet.PDF ]


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