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AP9920GEO डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9920GEO
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9920GEO?> डेटा पत्रक पीडीएफ

AP9920GEO pdf
AP9920GEO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=4.5V, ID=4A
VGS=4V, ID=4A
VGS=2.5V, ID=2A
VDS=VGS, ID=250uA
VDS=5V, ID=4A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±10V
ID=4A
VDS=25V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=5V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 -
-V
- - 27 mΩ
- - 28 mΩ
- - 36 mΩ
0.3 -
1V
- 13 - S
- - 1 uA
- - 25 uA
- - ±30 uA
- 11 18 nC
- 1 - nC
- 4 - nC
- 8 - ns
- 10 - ns
- 23 - ns
-7
- ns
- 590 950 pF
- 110 - pF
- 85 - pF
- 2.2 3.3
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=0.8A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 27 - ns
- 17 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad.
2/4

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