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P4N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SSP4N60 - Fairchild Semiconductor

भाग संख्या P4N60
समारोह SSP4N60
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=P4N60?> डेटा पत्रक पीडीएफ

P4N60 pdf
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SSP4N60AS
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oCunless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
600 -- --
-- 0.68 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 25
-- -- 250
V VGS=0V,ID=250µA
V/oC ID=250 µA See Fig 7
V VDS=5V,ID=250 µA
nA VGS=30V
VGS=-30V
VDS=600V
µA VDS=480V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 2.5 VGS=10V,ID=2A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.32 -- VDS=50V,ID=2A
O4
-- 545 710
--
63
75
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 25 30
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 14 40
-- 16 45
VDD=300V,ID=4A,
-- 49 110 ns RG=12
See Fig 13
-- 22 55
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 25 34
-- 4 --
-- 11.9 --
VDS=480V,VGS=10V,
nC
ID=4A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 4
-- 16
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.4 V TJ=25oC,IS=4A,VGS=0V
-- 350 -- ns TJ=25oC,IF=4A
-- 2.15 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=30mH, IAS=4A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD<_ 4A, di/dt <_ 100A/µs, V DD <_BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature

विन्यास 7 पेज
डाउनलोड[ P4N60 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
P4N60SSP4N60Fairchild Semiconductor
Fairchild Semiconductor


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