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J512 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon P Channel MOS Type Field Effect Transistor - Toshiba Semiconductor

भाग संख्या J512
समारोह Silicon P Channel MOS Type Field Effect Transistor
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=J512?> डेटा पत्रक पीडीएफ

J512 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
VDD ≈ −200 V, VGS = 10 V,
Gatesource charge
Qgs ID = 5 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SJ512
Min
250
1.5
1.8
Typ.
1.0
3.7
800
80
250
Max
±10
100
3.5
1.25
Unit
µA
µA
V
V
S
pF
— 16 —
— 35 —
ns
—9—
— 70 —
— 22 —
— 14 — nC
—8—
Min Typ. Max Unit
— — 5 A
20
A
— — 2.0 V
— 205 —
ns
— 2.1 — µC
2 2002-09-02

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डाउनलोड[ J512 Datasheet.PDF ]


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