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GM2306 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GM2306
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GM2306?> डेटा पत्रक पीडीएफ

GM2306 pdf
www.DataSheet4U.com
ISSUED DATE :2006/01/20
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
- - V VGS=0, ID=250uA
0.1 - V/ Reference to 25 , ID=1mA
- 1.2 V VDS=VGS, ID=250uA
13 -
S VDS=5V, ID=5.3A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 10 uA VDS=16V, VGS=0
- - 30
VGS=10V, ID=5.5A
Static Drain-Source On-Resistance RDS(ON)
-
-
- 35 m VGS=4.5V, ID=5.3A
- 50
VGS=2.5V, ID=2.6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 90
VGS=1.8V, ID=1.0A
- 8.7 -
ID=5.3A
- 1.5 - nC VDS=10V
- 3.6 -
VGS=4.5V
-6-
- 14 -
- 18.4 -
- 2.8 -
VDS=15V
ID=1A
ns VGS=10V
RG=2
RD=15
- 603 -
- 144 -
- 111 -
VGS=0V
pF VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
16.8
11
Max.
1.2
-
-
Unit Test Conditions
V IS=1.2A, VGS=0V
ns IS=5A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GM2306
Page: 2/4

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डाउनलोड[ GM2306 Datasheet.PDF ]


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