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GM2301 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GM2301
समारोह P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GM2301?> डेटा पत्रक पीडीएफ

GM2301 pdf
www.DataSheet4U.com
ISSUED DATE :2006/01/20
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-20
-
-0.5
-
-
- - V VGS=0, ID=-250uA
-0.1 - V/ Reference to 25 , ID=-1mA
- - V VDS=VGS, ID=-250uA
4.4 -
S VDS=-5V, ID=-2.8A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-20V, VGS=0
- -10 uA VDS=-16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 130 m VGS=-5.0V, ID=-2.8A
- 190
VGS=-2.8V, ID=-2.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 5.2 10
ID=-2.8A
Qgs
- 1.36 -
nC VDS=-6V
Qgd - 0.6 -
VGS=-5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 5.2 -
- 9.7 -
- 19 -
- 29 -
VDS=-15V
ID=-1A
ns VGS=-10V
RG=6
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 295 -
- 170 -
- 65 -
VGS=0V
pF VDS=-6V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
-1.2
-1
-10
Unit Test Conditions
V IS=-1.6A, VGS=0V, Tj=25
A VD=VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GM2301
Page: 2/4

विन्यास 4 पेज
डाउनलोड[ GM2301 Datasheet.PDF ]


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