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GS152B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GS152B
समारोह P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GS152B?> डेटा पत्रक पीडीएफ

GS152B pdf
ISSUED DATE :2006/02/06
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-20
-
-0.5
-
-
- - V VGS=0, ID=-250uA
-0.1 - V/ Reference to 25 , ID=-1mA
- -1.2 V VDS=VGS, ID=-1mA
1.5 -
S VDS=-10V, ID=-0.4A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 ) IDSS - - -10 uA VDS=-20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 300 m VGS=-4.5V, ID=-0.4A
- 500
VGS=-2.5V, ID=-0.4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 3.2 -
ID=-0.7A
Qgs - 0.7 - nC VDS=-10V
Qgd - 0.8 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 9.8 -
- 10.8 -
- 79.1 -
- 41.3 -
VDS=-10V
ns
ID=-0.4A
VGS=-4.5V
RG=6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 290 -
- 60 -
- 45 -
VGS=0V
Pf VDS=-20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
-1.1
Unit Test Conditions
V IS=-0.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GS152B
Page: 2/4

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