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HAT3021R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N/P Channel Power MOS FET Power Switching - Renesas Technology

भाग संख्या HAT3021R
समारोह Silicon N/P Channel Power MOS FET Power Switching
मैन्युफैक्चरर्स Renesas Technology 
लोगो Renesas Technology लोगो 
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<?=HAT3021R?> डेटा पत्रक पीडीएफ

HAT3021R pdf
HAT3021R
Electrical Characteristics
• N Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
80
±20
1.0
4.2
Typ
90
100
7.0
400
57
24
7.3
1.1
1.3
6.0
4.0
39
3.5
0.83
30
Max
± 10
1
2.5
115
145
1.08
(Ta = 25°C)
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 1.7 A, VGS = 10 V Note4
ID = 1.7 A, VGS = 4.5 V Note4
ID = 1.7 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 3.4 A
VGS = 10 V, ID = 1.7 A
VDD 30 V
RL = 17.6
Rg = 4.7
IF = 3.4 A, VGS = 0 Note4
IF = 3.4 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.00, Oct.06.2004, page 2 of 10

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