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APTM100UM65D-ALN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100UM65D-ALN
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTM100UM65D-ALN?> डेटा पत्रक पीडीएफ

APTM100UM65D-ALN pdf
APTM100UM65D-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V, ID = 1mA
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 75A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Min
1000
3
Typ Max Unit
V
400 µA
2 mA
65 m
5V
±400 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 145A
VGS = 15V
VBus = 500V
ID = 145A
RG = 0.75
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75
Min Typ Max Unit
28.5
5.08 nF
0.9
1068
136 nC
692
18
14
140
ns
55
4.8
mJ
2.9
8
mJ
3.9
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IRM
IF(A V)
VF
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
VR=1000V
50% duty cycle
IF = 240A
IF = 480A
IF = 240A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 240A
VR = 667V
di/dt = 800A/µs
IF = 240A
VR = 667V
di/dt = 800A/µs
Min Typ Max Unit
1000
V
Tj = 125°C
2 mA
Tc = 100°C
240
A
1.9 2.5
2.2 V
Tj = 125°C
1.7
Tj = 25°C
Tj = 125°C
280
350
ns
Tj = 25°C
Tj = 125°C
3
14.4
µC
APT website – http://www.advancedpower.com
2–6

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भाग संख्याविवरणविनिर्माण
APTM100UM65D-ALNMOSFET Power ModuleAdvanced Power Technology
Advanced Power Technology


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