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APTM100UM45D-ALN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100UM45D-ALN
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTM100UM45D-ALN?> डेटा पत्रक पीडीएफ

APTM100UM45D-ALN pdf
APTM100UM45D-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V, ID = 1.5mA
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 107.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Min
1000
3
Typ Max Unit
V
600 µA
3 mA
45 m
5V
±600 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 215A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 215A
RG = 0.5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
42.7
7.6 nF
1.3
1602
204 nC
1038
18
14
140
ns
55
7.2
mJ
4.3
12
mJ
5.8
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IRM
IF(A V)
VF
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
VR=1000V
50% duty cycle
IF = 360A
IF = 720A
IF = 360A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 360A
VR = 667V
di/dt = 800A/µs
IF = 360A
VR = 667V
di/dt = 800A/µs
Min Typ Max Unit
1000
V
Tj = 125°C
3 mA
Tj = 90°C 360 A
1.9 2.5
2.2 V
Tj = 125°C
1.7
Tj = 25°C
Tj = 125°C
280
350
ns
Tj = 25°C
Tj = 125°C
4.56
21.6
µC
APT website – http://www.advancedpower.com
2–6

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भाग संख्याविवरणविनिर्माण
APTM100UM45D-ALNMOSFET Power ModuleAdvanced Power Technology
Advanced Power Technology


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