DataSheet.in

APTM100U13S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100U13S
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APTM100U13S?> डेटा पत्रक पीडीएफ

APTM100U13S pdf
APTM100U13S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
2
130
Max
100
400
145
4
±200
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
RthJC Junction to Case
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 65A
Min Typ Max Unit
26.4 31.6
2.38 3.32 nF
1.16 1.72
1340 2000
116 180 nC
660 1000
Inductive Switching @ 25°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 1.5
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 1.5
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 1.5
20
20
ns
125
40
2.6
µJ
1.6
4.2
µJ
1.82
0.1 °C/W
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF(A V)
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR=200V
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 125°C
200
350
600
120
1.1 1.15
1.4
0.9
V
µA
A
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
31
60
120
500
ns
nC
RthJC Junction to Case
0.46 °C/W
APT website – http://www.advancedpower.com
2–5

विन्यास 5 पेज
डाउनलोड[ APTM100U13S Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APTM100U13SMOSFET Power ModuleAdvanced Power Technology
Advanced Power Technology


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English