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APTM100TA35FP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100TA35FP
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTM100TA35FP?> डेटा पत्रक पीडीएफ

APTM100TA35FP pdf
APTM100TA35FP
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 250µA
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
1000
3
Max
250
1000
350
5
±100
Unit
V
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 22A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
Min Typ Max Unit
5.2
0.88 nF
0.16
186
24 nC
122
18
12 ns
155
40
900
µJ
623
1423
779
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery Z
VGS = 0V, IS = - 22A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 22A
VR = 500V
diS/dt = 100A/µs
IS = - 22A
VR = 500V
diS/dt = 100A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 22A di/dt 700A/µs VR VDSS Tj 150°C
Min Typ Max Unit
22
17
A
1.3 V
18 V/ns
320
ns
650
3.6
µC
9.72
APT website – http://www.advancedpower.com
2–6

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डाउनलोड[ APTM100TA35FP Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
APTM100TA35FPMOSFET Power ModuleAdvanced Power Technology
Advanced Power Technology


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