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APTM100H45SCT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100H45SCT
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTM100H45SCT?> डेटा पत्रक पीडीएफ

APTM100H45SCT pdf
APTM100H45SCT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V, ID = 250µA
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V
VGS = 10V, ID = 9A
Tj = 125°C
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
1000
3
100
500
450
5
±100
V
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 18A
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy X
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy X
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
X In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
4350
715
120
pF
154
26 nC
97
10
12 ns
121
35
383
µJ
380
627
µJ
451
Parallel SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRRM
IF(A V)
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
VR=1200V
50% duty cycle
IF = 10A
Tj = 25°C
Tj = 150°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
1200
100
200
400
2000
10
1.6
2.6
1.8
3.0
V
µA
A
V
QC Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =800A/µs
28 nC
Q Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
90 pF
66
APT website – http://www.advancedpower.com
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