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APTM100DU18T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100DU18T
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTM100DU18T?> डेटा पत्रक पीडीएफ

APTM100DU18T pdf
APTM100DU18T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 500µA
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
1000
3
500
2000
180
5
±150
V
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 43A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
RG = 2.5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
Min Typ Max Unit
10.4
1.76 nF
0.32
372
48 nC
244
18
12 ns
155
40
1800
1246
µJ
2846
1558
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
VSD
dv/dt
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery Z
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 43A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 43A, VR = 500V
diS/dt = 200A/µs
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 43A di/dt 700A/µs VR VDSS Tj 150°C
Min Typ Max Unit
43
33
A
1.3 V
10 V/ns
1170
ns
32.5 µC
APT website – http://www.advancedpower.com
2–6

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डाउनलोड[ APTM100DU18T Datasheet.PDF ]


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Advanced Power Technology


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