DataSheet.in

APTM100DDA35T3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100DDA35T3
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APTM100DDA35T3?> डेटा पत्रक पीडीएफ

APTM100DDA35T3 pdf
APTM100DDA35T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 250µA
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
1000
3
Max
250
1000
350
5
±100
Unit
V
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 22A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
Min Typ Max Unit
5.2
0.88 nF
0.16
186
24 nC
122
18
12 ns
155
40
900
µJ
623
1423
779
µJ
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min Typ Max Unit
1000
V
VR=1000V
Tj = 25°C
Tj = 125°C
250
750
µA
50% duty cycle
IF = 30A
IF = 60A
IF = 30A
Tc = 70°C
Tj = 125°C
30
1.9 2.3
2.2
1.7
A
V
IF = 30A
VR = 667V
di/dt=200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
290
390
670
2350
ns
nC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6

विन्यास 6 पेज
डाउनलोड[ APTM100DDA35T3 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APTM100DDA35T3MOSFET Power ModuleAdvanced Power Technology
Advanced Power Technology


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English