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APTM100A13D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Advanced Power Technology

भाग संख्या APTM100A13D
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTM100A13D?> डेटा पत्रक पीडीएफ

APTM100A13D pdf
APTM100A13D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 1.5mA
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
1000
3
Max
600
2
130
5
±450
Unit
V
µA
mA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 65A
Inductive switching @ 125°C
VGS = 15V
VBus =667V
ID = 65A
RG = 0.5
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
Min Typ Max Unit
15.2
2.6 nF
0.44
562
75 nC
363
9
9
50
ns
24
2.13
mJ
0.46
4.5
mJ
0.57
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IRM
IF(A V)
VF
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
VR=1000V
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 120A
VR = 670V
di/dt = 400A/µs
IF = 120A
VR = 670V
di/dt = 400A/µs
Min Typ Max Unit
1000
V
Tj = 125°C
1 mA
Tc = 100 °C
120
A
1.9 2.5
2.2 V
Tj = 125°C
1.7
Tj = 25°C
Tj = 125°C
280
350
ns
Tj = 25°C
Tj = 125°C
1.5
7.2
µC
APT website – http://www.advancedpower.com
2-6

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