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FQH90N15 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - Fairchild Semiconductor

भाग संख्या FQH90N15
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQH90N15?> डेटा पत्रक पीडीएफ

FQH90N15 pdf
Package Marking and Ordering Information
Device Marking
FQH90N15
FQA90N15
FQA90N15
Device
FQH90N15
FQA90N15
FQA90N15_F109
Package
TO-247
TO-3P
TO-3PN
Reel Size
--
--
--
Tape Width
--
--
--
Quantity
30
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 150V, VGS = 0V
VDS = 120V, TC = 150°C
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
150
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 45A
2.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 45A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 75V, ID = 90A
RG = 25Ω
VDS = 120V, ID = 90A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
Typ.
--
0.15
--
--
--
--
--
0.014
68
6700
1400
200
105
760
470
410
220
43
110
--
--
--
175
0.97
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
4.0
0.018
--
V
Ω
S
8700
1800
260
pF
pF
pF
220
1500
950
830
285
--
--
ns
ns
ns
ns
nC
nC
nC
90 A
360 A
1.5 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. ISD 90A, di/dt 300A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQH90N15 / FQA90N15 Rev. C
2
www.fairchildsemi.com

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डाउनलोड[ FQH90N15 Datasheet.PDF ]


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