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NMSD200B01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE - Diodes Incorporated

भाग संख्या NMSD200B01
समारोह SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
मैन्युफैक्चरर्स Diodes Incorporated 
लोगो Diodes Incorporated लोगो 
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<?=NMSD200B01?> डेटा पत्रक पीडीएफ

NMSD200B01 pdf
Maximum Ratings: @ TA = 25°C unless otherwise specified
Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Characteristic
Drain Source Voltage
Drain Gate Voltage (RGS <+ 1MOhm
Gate Source Voltage
Continuous
Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3) Continuous (Vgs=10V)
Pulsed (tp<10uS, Duty Cycle<1%)
Continuous Source Current
Symbol
VDSS
VDGR
VGSS
ID
IS
Value
60
60
+/-20
+/-40
200
800
200
Unit
V
V
V
mA
mA
Sub-Component Device: Schottky Diode (D1) @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Foward Continuous Current (Page 1: Note 3)
Non-Repetitive Peak Foward Surge Current @ t<1.0 s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Value
40
28
350
1.5
Unit
V
V
mA
A
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q1) @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage Current)
Gate Body Leakage Current, Foward
Gate Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
Symbol
VBR(DSS)
IDSS
IGSSF
IGSSR
VGS(th)
Static Drain-Source On-State Voltage
VDS(on)
On-State Drain Current
ID(on)
Static Drain-Source On Resistance
RDS (on)
Foward Transconductance
gFS
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
COSS
Reverse Transfer Capacitance
Crss
Switching Characteristics*
Turn-On Delay Time
td(on)
Turn-Off Delay Time
td(off)
Drain-Source (Body) Diode Characteristics and Maximum Ratings
Drain-Source Diode Foward On-Voltage
VSD
Maximum Continuous Drain-Source Diode Foward Current
(Reverse Drain Current)
IS
Maximum Pulsed Drain-Source Diode Foward Current
ISM
Min Typ Max Unit
Test Condition
60 ¾ ¾ V VGS = 0V, ID = 10mA
¾ ¾ 1 mA VGS = 0V, VDS = 60V
¾ ¾ 10 mA VGS = 20V, VDS = 0V
¾ ¾ -10 mA VGS = -20 V, VDS = 0V
1
1.65
¾
¾
500
¾
¾
80
1.6
1.8
0.09
0.62
¾
1.6
1.25
260
2.5
3
1.5
1.25
¾
3
2
¾
V VDS = VGS=10V, ID = 0.25mA
V VDS = VGS = 10V, ID = 1mA
V VGS = 5V, ID = 50mA
V VGS = 10V, ID = 500mA
mA VGS = 10V, VDS >=2*VDS(ON)
W VGS = 5V, ID= 50mA
VGS = 10V, ID = 500mA
mS VDS >=2*VDS(ON), ID=200mA
¾ ¾ 50 pF
¾
¾
25
pF
VDS = 25V, VGS = 0V,
f = 1MHz
¾ ¾ 5 pF
20 ns
40 ns
0.88 1.5
V VGS = 0V, IS = 300 mA*
300 mA
800 mA
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d £2%
DS30911 Rev. 2 - 2
2 of 8
www.diodes.com
NMSD200B01

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NMSD200B01SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODEDiodes Incorporated
Diodes Incorporated


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