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IRFP27N60KPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFP27N60KPBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP27N60KPBF pdf
IRFP27N60KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.64 ––– V/°C Reference to 25°C, ID = 1mA
––– 180 220 mVGS = 10V, ID = 16A „
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 250
µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
14 ––– ––– S VDS = 50V, ID = 16A
––– ––– 180
ID = 27A
––– ––– 56 nC VDS = 480V
––– ––– 86
––– 27 –––
VGS = 10V, See Fig. 6 and 13 „
VDD = 300V
––– 110 ––– ns ID = 27A
––– 43 –––
RG = 4.3
––– 38 –––
––– 4660 –––
VGS = 10V,See Fig. 10 „
VGS = 0V
––– 460 –––
––– 41 –––
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
––– 5490 –––
––– 120 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
––– 250 –––
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 27
––– ––– 110
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 27A, VGS = 0V „
––– 620 920 ns TJ = 25°C, IF = 27A
––– 11 16 µC di/dt = 100A/µs „
––– 36 53 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.4mH, RG = 25,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
ƒ ISD 27A, di/dt 390A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
www.irf.com

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