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CEBF630B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEBF630B
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEBF630B?> डेटा पत्रक पीडीएफ

CEBF630B pdf
CEPF630B/CEBF630B
CEIF630B/CEFF630B
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 200V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.5A
Forwand Transconductance
Dynamic Characteristics c
gFS VDS = 40V, ID = 4.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 100V, ID = 9A,
VGS = 10V, RGEN = 25
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 160V, ID = 9A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS g
VSD
VGS = 0V, IS = 9A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 3mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 6A .
Min
200
2
Typ
0.34
7
550
100
30
25
84
72
77
22
3
12
Max Units
25
100
-100
V
µA
nA
nA
4V
0.4
S
pF
pF
pF
50 ns
150 ns
130 ns
140 ns
29 nC
nC
nC
9A
1.5 V
4
4 - 195

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डाउनलोड[ CEBF630B Datasheet.PDF ]


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