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CEP13N07 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP13N07
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP13N07?> डेटा पत्रक पीडीएफ

CEP13N07 pdf
CEP13N07/CEB13N07
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
70
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.5A
VGS = 5V, ID = 5.5A
VDS = 25V, ID = 5.5A
1
1
100
-100
V
µA
nA
nA
2.5 V
97 125 m
120 150 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
413
105
pF
pF
Crss 23 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 6.8A,
VGS = 5V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 13.6A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 30 ns
10 25 ns
28 55 ns
9 20 ns
5.5 6.4 nC
2.1 nC
2.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 11A
11 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 870µH, IAS = 11A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
4
4 - 55

विन्यास 4 पेज
डाउनलोड[ CEP13N07 Datasheet.PDF ]


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CEP13N07N-Channel Enhancement Mode Field Effect TransistorCET
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