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FDMB3800N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMB3800N
समारोह Dual N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMB3800N?> डेटा पत्रक पीडीएफ

FDMB3800N pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage,
VGS = 0V, ID = 250µA
ID = 250µA,
Referenced to 25°C
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V,
TJ = 55°C
VGS = ±20V, VDS = 0V
30 - - V
- 24 - mV/°C
- -1
- - 10 µA
- - ±100 nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250µA
ID = 250µA,
Referenced to 25°C
VGS = 10V, ID = 4.8A
VGS = 4.5V, ID = 4.3A
VGS = 10V, ID = 4.8A
TJ = 125°C
VGS = 10V, VDS = 5V
VDS = 5V, ID = 4.8A
1 1.9 3
V
- -4 - mV/°C
- 32 40
- 41 51 m
- 43 61
10 -
- 14
-
-
A
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1.0MHz
f=1.0MHz
-
350 465
pF
- 90 120 pF
- 40 60 pF
- 3-
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15V, ID = 1A
VGS = 10V, RGEN = 6
VDS = 15V, ID = 7.5A,
VGS = 5V
- 8 16 ns
- 5 10 ns
- 21 34 ns
- 2 10 ns
- 4 5.6 nC
- 1.0 - nC
- 1.5 - nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
- - 1.25 A
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS =1.25 A (Note 2) -
0.8 1.2
V
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF= 4.8A, dIF/dt=100A/µs
- - 22 ns
- - 9 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
a) 80°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 165°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1: 1 on letter size paper
FDMB3800N Rev. C
2 www.fairchildsemi.com

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डाउनलोड[ FDMB3800N Datasheet.PDF ]


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