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HE8550 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR - UTC

भाग संख्या HE8550
समारोह LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
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<?=HE8550?> डेटा पत्रक पीडीएफ

HE8550 pdf
HE8550
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-6
V
SOT-23
350 mW
Collector Dissipation (Ta=25 )
SOT-89
PC
0.5
W
TO-92/TO-92NL
1W
Collector Current
IC -1.5
A
Junction Temperature
TJ +150
Operating Ambient Temperature
TOPR
-40 ~ +150
Storage Temperature
TSTG
-65 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=-2mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100µA, IC=0
Collector Cut-Off Current
ICBO VCB=-35V, IE=0
Emitter Cut-Off Current
IEBO VEB=-6V, IC=0
hFE1 VCE=-1V, IC=-5mA
DC Current Gain
hFE2 VCE=-1V, IC=-100mA
hFE3 VCE=-1V, IC=-800mA
Collector-Emitter Saturation Voltage VCE(SAT) IC=-800mA, IB=-80mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-800mA, IB=-80mA
Base-Emitter Voltage
VBE VCE=-1V,IC=-10mA
Current Gain Bandwidth Product
fT VCE=-10V,IC=-50mA
Output Capacitance
Cob VCB=-10V, IE=0 f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
MIN TYP MAX UNIT
-40 V
-25 V
-6 V
-100 nA
-100 nA
45 170
85 160 500
40 80
-0.28 -0.5
V
-0.98 -1.2
V
-0.66 -1.0
V
100 190
MHz
9.0 pF
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-031,B

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