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2N6099 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY SILICON TRANSISTORS - UTC

भाग संख्या 2N6099
समारोह COMPLEMENTARY SILICON TRANSISTORS
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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<?=2N6099?> डेटा पत्रक पीडीएफ

2N6099 pdf
UTC2N3773/2N6099
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO
Ic=0.2A,Ib=0
140
Collector-Emitter Sustaining Voltage BVCEX
Ic=0.1A,Vbe(OFF)=1.5V
Rbe=100
160
Collector-Emitter Sustaining Voltage BVCER
Ic=0.1A
Rbe=100
150
Collector Cut-off Current
ICBO
VCB=140V,IE=0
Emitter Cut-off Current
IEBO
VBE=7V,Ic=0
Collector Cut-off Current
ICEX
VCE=140V,VBE(off)=1.5V
VCE=140V,VBE(off)=1.5V
,Tc=150°C
OFF CHARACTERISTICS
DC current gain(note)
hFE1
hFE2
VCE=4V,Ic=8A
VCE=4V,Ic=16A
15
5
Collector-emitter saturation voltage VCE(sat)
Ic=8A,IB=800mA
Ic=16A,IB=3.2A
Base-emitter saturation voltage
VBE(on)
Ic=8A, VCE=4V
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hFE
Ic=1A,VCE=4V,f=1kHz
40
Magnitade of commom-Emitter
small signal,short circuit forward
|hFE|
Ic=1A,f=50kHz
4
current transfer ratio
Second breakdown collector with Is/b t=1s(non-repetive),VCE=100V 1.5
base forward biased
TYP
2
10
MAX
2
5
60
1.4
4
2.2
UNIT
V
V
V
mA
mA
mA
mA
V
V
A
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R205-001,A

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