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2SC1815 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON TRANSISTOR - UTC

भाग संख्या 2SC1815
समारोह NPN SILICON TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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<?=2SC1815?> डेटा पत्रक पीडीएफ

2SC1815 pdf
2SC1815
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC 150 mA
Base Current
IB 50 mA
Power Dissipation (TA=25°C)
PD 625 mW
Junction Temperature (Note 2)
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. It is guarantee by design, not 100% be tested.
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
80
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE1
hFE2
fT
Cob
TEST CONDITIONS
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
100 nA
100 nA
0.1 0.25
V
1.0 V
70 700
25
80 MHz
2.0 3.0 pF
CLASSIFICATION OF hFE1
RANK
RANGE
O
70~140
Y
120~240
GR
200~400
BL
350~700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-006.O

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डाउनलोड[ 2SC1815 Datasheet.PDF ]


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