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UP2518 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - LOW VCE(SAT) PNP SILICON POWER TRANSISTORS - UTC

भाग संख्या UP2518
समारोह LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
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<?=UP2518?> डेटा पत्रक पीडीएफ

UP2518 pdf
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta = 25 )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-20
-5
V
V
Peak Pulse Current (Note 2)
Continuous Collector Current
IPEAK
IC
-6
-1.5
A
A
Base Current
Power Dissipation at Ta =25°C(Note 3)
IB
-500
mA
PD 625 mW
Junction Temperature
TJ +150
Storage Temperature
TSTG
-40~+150
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle 2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm
ELECTRICAL CHARACTERISTICS (Ta = 25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC= -100µA
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCEO IC= -10mA
BVEBO IE= -100µA
Collector Cut-Off Current
ICBO VCB= -15V
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
IEBO
ICES
VEB= -4V
VCES= -15V
Collector-Emitter Saturation Voltage
IC= -100mA, IB= -10mA
VCE(SAT) IC= -1A, IB= -20mA
IC= -1.5A, IB= -50mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT) IC= -1.5A, IB= -50mA
VBE(ON) IC= -2A, VCE= -2V
DC Current Gain
IC= -10mA, VCE= -2V
IC= -100mA, VCE= -2V
hFE IC= -2A, VCE= -2V
IC= -4A, VCE= -2V
IC= -6A, VCE= -2V
Transition Frequency
Output Capacitance
fT IC= -50mA, VCE =-10V, f=100MHz
COB VCB= -10V, f=1MHz
Turn-On Time
t(ON) VCC= -10V, IC= -1A
Turn-Off Time
t(OFF) IB1= IB2= -20mA
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2%
MIN TYP MAX UNIT
-20 -65
V
-20 -55
V
-5 -8.8
V
-100 nA
-100 nA
-100 nA
-16 -40 mV
-130 -200 mV
-145 -220 mV
-0.87 -1.0 V
-0.81 -1.0 V
300 475
300 450
150 230
35 70
15 30
150 180
MHZ
21 30 pF
40 ns
670 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-083,A

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UP2518LOW VCE(SAT) PNP SILICON POWER TRANSISTORSUTC
UTC


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