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J110 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - JFET - General Purpose N-Channel - ON Semiconductor

भाग संख्या J110
समारोह JFET - General Purpose N-Channel
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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J110 pdf
J110
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
STATIC CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
Gate−Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
Drain Source On−Resistance
(VDS v 0.1 V, VGS = 0 V)
Zero−Gate−Voltage Drain Current (Note 1)
(VDS = 15 Vdc)
DYNAMIC CHARACTERISTICS
Drain−Gate and Source−Gate On−Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain−Gate Off−Capacitance
Source−Gate Off−Capacitance
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
(VGS = −10 Vdc, f = 1.0 MHz)
(VGS = −10 Vdc, f = 1.0 MHz)
Symbol
V(BR)GSS
IGSS
VGS(off)
RDS(on)
IDSS
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
Min
−25
−0.5
10
Max
− 3.0
−200
−4.0
18
85
Unit
Vdc
nAdc
Vdc
W
mAdc
pF
− 15 pF
− 15 pF
100 100
80 80
60
VDS = 0 V
5V
40
10 V
20
0
0 −4 −8 −12 −16 −20
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus Gate−Source Voltage
16
12
RDS(on): VDS 0.1 V
RDS(on): VGS = 0 V
8
4
VGS(off): VDS = 5 V
VGS(off): ID = 1.0 mA
0
0 −1 −2 −3 −4 −5 −6 −7 −8
VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Gate−Source
Cutoff Voltage
60
40 VDS = 0 V
20
5V
0 10 V
0 −4
−8 −12 −16 −20
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 2. Common Source Reverse Feedback
Capacitance versus Gate−Source Voltage
100
90
80
70
60
50
40
30
20
10
0
0
VGS = 0 V
−0.25 V
−0.5 V
−0.75 V
−1 V
−1.25 V
2 4 6 8 10 12 14 16 18
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Output Characteristic
VGS(off) = −2.0 V
20
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