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FQI16N25C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI16N25C
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQI16N25C?> डेटा पत्रक पीडीएफ

FQI16N25C pdf
Package Marking and Ordering Information
Device Marking
FQB16N25C
FQI16N25C
Device
FQB16N25CTM
FQI16N25CTU
Package
D2-PAK
I2-PAK
Reel Size
330mm
--
Tape Width
24mm
--
Quantity
800
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 7.8A
VDS = 40 V, ID = 7.8 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 125 V, ID = 15.6A,
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 200 V, ID = 15.6A,
VGS = 10 V
Qgd Gate-Drain Charge
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 15.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 15.6 A,
dIF / dt = 100 A/µs
(Note 4)
250
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, IAS = 15.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 15.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.31
--
--
--
--
--
0.22
10.5
830
170
68
15
130
135
105
41
5.6
22.7
--
--
--
260
2.47
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
0.27
-- S
1080
220
89
pF
pF
pF
40
270
280
220
53.5
--
--
ns
ns
ns
ns
nC
nC
nC
15.6 A
62.4 A
1.5 V
-- ns
-- µC
FQB16N25C/FQI16N25C Rev. A1
2
www.fairchildsemi.com

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